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| BBY 56-02W Silicon Tuning Diode Preliminary data * Excellent linearity * High Q hyperabrupt tuning diode * Low series inductance * Designed for low tuning voltage operation for VCO's in mobile communications equipment * Very low capacitance spread 2 1 VES05991 Type BBY 56-02W Marking 6 Ordering Code Q62702- Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 ...+150 -55 ...+150 Unit V mA C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -14-1998 BBY 56-02W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 1 100 Unit IR IR - nA A VR = 8 V Reverse current VR = 8 V, TA = 65 C AC characteristics Diode capacitance CT 59 39 22 19.4 15.9 2.45 0.3 0.09 0.6 67 43 27.2 23.7 19 - pF VR = 0.32 V, f = 1 MHz VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 2.38 V, f = 1 MHz VR = 3 , f = 1 MHz Capacitance ratio CT1/C T3 rs CC Ls - pF nH VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 330 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -14-1998 |
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